Project directory

ARCSIS 88

Predictive models of metallization BEOL processes beyond 65 nm

Research on the development and validation of models for the numerical simulation of key steps in the fabrication of microelectronic pathways

It will be necessary to realize a feasibility demonstration of properties predictions such as: topography, 3D arrangement of the grains and grain boundaries, constraints, interface roughness, for lines and vias beyond 65nm.

This study responds to a number of priority TCAD needs identified in the international roadmap of the semiconductor industry.