Project leader
LP3UMR6182 CNRS-Univ. MéditerranéeFunders
ANR,MultiPhoton e-Inject 2010
Intense laser free carrier injection: 3D control of failures inside integrated semiconductor devices.
The aim of the MultiPhoton E-Inject project is to take advantage of the specificities of high-order multiphonic interactions to develop innovative solutions for the treatment of problems related to the failure of integrated microelectronics devices. The innovative technique that will be developed is based on localized injection of free carriers by infrared femtosecond laser. It will add to the panel of non-linear microscopies and will map materials and their defectivities (defects) with sub-micrometric resolution in a three-dimensional space inside integrated devices. Failure analysis is a major strategic aspect in the semiconductor industry to improve product reliability and design. The project will also address interaction regimes that are particularly attractive for direct writing and / or local correction within semiconductors. Thus, it will open new ways to develop complete solutions (from the detection of defects to the correction of materials) for microelectronics.
This project was submitted as part of the 2010 edition of the Young Researchers and Young Researchers program of the ANR.