Project directory

REFLEX

REsistive Memories on FLEXible Media

The objective of this project is to develop demonstrators of flexible, non-volatile, low-density memory arrays dedicated to future Radio Frequency Identification (RFID) applications such as smart tags. Thanks to the use of chalcogen alloys as functional materials, three kinds of memory technologies, based on distinct physical phenomena, will be realized on flexible support. Firstly, CBRAM (Conductive Bridge RAM) memories where a GeS type alloy, used as solid electrolytes, is associated with an electrochemically active (Ag) and inert (W) electrode. Then PCM memories (Phase-Change Memory) where the GeTe is used as phase change materials and finally hybrid memories combining the PCM / CBRAM functionality to have 4 logical states per cell.